Blar i NTNU Open på forfatter "Vatanparast, Maryam"

Viser treff 1-8 av 8

    • Advanced TEM studies of quantum dot based intermediate band solar cell materials 

      Vatanparast, Maryam (Doctoral theses at NTNU;2019:170, Doctoral thesis, 2019)

    • Bandgap measurement of high refractive index materials by off-axis EELS 

      Vatanparast, Maryam (Journal article; Peer reviewed, 2017)
      In the present work Cs aberration corrected and monochromated scanning transmission electron microscopy electron energy loss spectroscopy (STEM-EELS) has been used to explore experimental set-ups that allow bandgaps of ...

    • Bandgap measurement of high refractive index materials by off-axis EELS 

      Vatanparast, Maryam; Egoavil, Ricardo; Reenaas, Turid Worren; verbeeck, Johan; Holmestad, Randi; Vullum, Per Erik (Journal article; Peer reviewed, 2017)
      In the present work Cs aberration corrected and monochromated scanning transmission electron microscopy electron energy loss spectroscopy (STEM-EELS) has been used to explore experimental set-ups that allow bandgaps of ...

    • Detecting minute amounts of nitrogen in GaNAs thin films using STEM and CBED 

      Vatanparast, Maryam; Shao, Yu-Tsun; Rajpalke, Mohana; Fimland, Bjørn-Ove; Reenaas, Turid Dory; Holmestad, Randi; Vullum, Per Erik; Zuo, Jian Min (Journal article; Peer reviewed, 2021)
      Nitrogen (N) is a common element added to GaAs for band gap engineering and strain compensation. However, detection of small amounts of N is difficult for electron microscopy as well as for other chemical analysis techniques. ...

    • Low-Energy Electronic Properties of Graphene 

      Vatanparast, Maryam (Master thesis, 2013)
      We investigate the electronic structure of two-dimensional (2D) mate- rials with and without spin-orbit coupling. Initially, we use the tight- binding model to derive the electronic structure of graphene with stag- gered ...

    • Methodology to Improve Strain Measurement in III–V Semiconductors Materials 

      Vatanparast, Maryam; Vullum, Per Erik; Nord, Magnus Kristofer; Reenaas, Turid Worren; Holmestad, Randi (Journal article; Peer reviewed, 2017)
      Geometric phase analysis (GPA), a fast and simple Fourier space method for strain analysis, can give useful information on accumulated strain and defect propagation in multiple layers of InAs/GaAs quantum dot (QD) materials. ...

    • Quantitative strain analysis of InAs/GaAs quantum dot materials 

      Vullum, Per Erik; Nord, Magnus Kristofer; Vatanparast, Maryam; Thomassen, Sedsel Fretheim; Boothroyd, Chris; Holmestad, Randi; Fimland, Bjørn-Ove; Reenaas, Turid Worren (Journal article; Peer reviewed, 2017)
      Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch ...

    • Strategy for reliable strain measurement in InAs/GaAs materials from high-resolution Z-contrast STEM images 

      Vatanparast, Maryam; Vullum, Per Erik; Nord, Magnus Kristofer; Zuo, Jian Min; Reenaas, Turid Worren; Holmestad, Randi (Journal article; Peer reviewed, 2017)
      Geometric phase analysis (GPA), a fast and simple Fourier space method for strain analysis, can give useful information on accumulated strain and defect propagation in multiple layers of semiconductors, including quantum ...